NCS2004MUTAG onsemi

Here is a potential product introduction for the ON Semiconductor NCS2004MUTAG Power MOSFET:

NCS2004MUTAG

The NCS2004MUTAG delivers industry-leading power density and reliability in an ultra-compact TO-252 thinSIL package. As a 20A N-channel MOSFET optimized for demanding applications with stringent thermal requirements, it maximizes current handling within minimal cooling area.

Key Features:

• 30V power rating
• 20A continuous drain current capability
• 0.25Ω typical RDS(on)
• Ultra-thin TO-252 thinSIL package
• 150°C maximum junction temperature rating
• Outstanding thermal performance
• Ideal for battery-powered equipment

Enables 20A switching power from a miniature footprint with minimal height.

Unique thinSIL package dissipates heat effectively in highly constrained designs.

150°C maximum junction temp withstands continuous operation at full power.

Outstanding thermal properties minimize required copper area for heat sinking.

Simplifies integration where space is extremely limited in all three dimensions.

On Semiconductor's density optimized leader for highly thermally constrained needs.

Ideal solution where maximizing current handling within minimal cooling area is critical.

NCS2004MUTAG onsemi Images