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NTZD3155CT1G

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ZhongHao Industry Limited

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NTZD3155CT1G

Description : NTZD3155CT1G SOT-563-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-563-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	540 mA
Rds On - Drain-Source Resistance:	550 mOhms, 900 mOhms
Vgs - Gate-Source Voltage:	- 6 V, + 6 V
Vgs th - Gate-Source Threshold Voltage:	450 mV, 1 V
Qg - Gate Charge:	2.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 mW
Channel Mode:	Enhancement
Series:	NTZD3155C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Dual
Fall Time:	4 ns, 12 ns
Height:	0.55 mm
Length:	1.6 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	4 ns, 12 ns
	4000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	16 ns, 35 ns
Typical Turn-On Delay Time:	6 ns, 10 ns
Width:	1.2 mm
Unit Weight:	0.000106 oz

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