Sign In | Join Free | My chinacomputerparts.com

For Buyers
For Suppliers
- Search Suppliers
- Privacy Policy
Inquiry Basket(0)

: ZhongHao Industry Limited

ZhongHao Industry Limited

Home > Onsemi Ic >

FDN359BN

Product Categories

Microchip Technology Ic [3000]
Onsemi Ic [2405]
Ic [3000]
Renesas Ic [3000]
Infineon Ic [1869]
Maxim Integrated Circuits [676]
Skyworks Ic [1663]
Diodes Ic [515]
Linear Integrated Circuits [264]
Nexperia Diodes [4]
Adi Ic [142]
Analog Integrated Circuits [3000]
Broadcom Ic [130]
Stmicroelectronics Products [2415]
Silicon Labs Ic [580]
Altera Intel Chip [2623]
Ricoh Ic [34]
Idt Ic [2]
Toshiba Integrated Circuit [3]
Molex Integrated [1]
Panasonic Integrated Circuits [5]
Ixys Integrated Circuits [203]
Xilinx Ic [1114]
Vishay Ic [373]
Power Integrations Ic [7]
Harting Electronics [50]
Powerex Electronics [5]
Everlight Electronics [3]
Kemet Electronic Components [2]
Microsemi Distributors [2]
Micrel Microchip [20]
Samtec Inc [10]
Atmel Microchip [77]
Avago Technologies Broadcom [1]
Mps Monolithic Power Systems [99]
Toshiba Semiconductor And Storage [39]
Microsemi Corporation [142]
Vishay General Semiconductor [9]
Sii Semiconductor [33]
Rohm Semiconductor [277]
Micron Technology Semiconductor [238]
Torex Semiconductor [180]
Cypress Semiconductor [403]
Fairchild Semiconductor [5]
Samsung Semiconductor [1]
Linear Technology Ic [348]
Intersil Ic [7]
Maxlinear Products [341]

ZhongHao Industry Limited

Contact Now

FDN359BN

Description : FDN359BN SSOT-3

Contact Now

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SSOT-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	2.7 A
Rds On - Drain-Source Resistance:	46 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	500 mW
Channel Mode:	Enhancement
Series:	FDN359BN
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Single
Fall Time:	5 ns
Height:	1.12 mm
Length:	2.9 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	5 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	7 ns
Width:	1.4 mm
Unit Weight:	0.001058 oz

China FDN359BN factory

FDN359BN Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	ZhongHao Industry Limited
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!

You May Like

Friendly Links: www.everychina.com

Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们

Copyright © 2009 - 2025 chinacomputerparts.com. All rights reserved.