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FDG6320C

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ZhongHao Industry Limited

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FDG6320C

Description : FDG6320C SOT-323-6

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFET
RoHS:	Details
Technology:	Si
Mounting Style:	SMD/SMT
Package / Case:	SOT-323-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	220 mA
Rds On - Drain-Source Resistance:	4 Ohms
Vgs - Gate-Source Voltage:	- 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage:	650 mV, 1.5 V
Qg - Gate Charge:	400 pC, 310 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 mW
Channel Mode:	Enhancement
Series:	FDG6320C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi / Fairchild
Configuration:	Dual
Fall Time:	4.5 ns, 8 ns
Forward Transconductance - Min:	0.2 S, 0.12 S
Height:	1.1 mm
Length:	2 mm
Product:	MOSFET Small Signal
Product Type:	MOSFET
Rise Time:	4.5 ns, 8 ns
	3000
Subcategory:	MOSFETs
Transistor Type:	1 N-Channel, 1 P-Channel
Type:	FET
Typical Turn-Off Delay Time:	4 ns, 9 ns
Typical Turn-On Delay Time:	5 ns, 5 ns
Width:	1.25 mm
Part # Aliases:	FDG6320C_NL
Unit Weight:	0.000988 oz

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